FUJI 6MBI75UC-120-52 IGBT Module

The Fuji Electric 6MBI75UC-120-52 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for high-power switching and inversion. This U-series module utilizes a 6-pack configuration, integrating six IGBT units into a single compact package to simplify circuit design in three-phase inverter applications. Engineered for a collector-emitter voltage of 1200V and a continuous collector current of 75A, this component provides the robust power density required for modern industrial electronics.

Key Technical Specifications

• Configuration: 6-Pack (Three-phase bridge)
• Collector-Emitter Voltage (VCES): 1200V
• Collector Current (IC): 75A
• Gate-Emitter Voltage (VGES): ±20V
• Collector Power Dissipation (PC): Optimized for low thermal resistance
• Package Style: UC-Series modular housing
• Switching Speed: High-speed switching for VFD applications

Advanced Protection and Reliability

With integrated soft-switching characteristics, the module effectively reduces electromagnetic interference (EMI), which protects sensitive nearby control circuitry. The robust housing and terminal design are built to withstand the mechanical and thermal stresses typical of industrial environments, ensuring a stable lifecycle even in continuous operation.